Infineon's CoolSiC™ Schottky diodes 650V deliver the best price-performance and customer value in the market, leveraging advanced silicon carbide production facilities, a solid track record, the upmost quality and a very granular and complete combined G5/G6 portfolio.
The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F). The CoolSiC™ G6 diodes complement Infineon’s 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
Product portfolio CoolSiC™ Schottky diodes 650V G6
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